Toward Large-Scale Ga 2 O 3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

• Published in: ACS applied materials & interfaces Vol. 13; no. 11; pp. 13410 - 13418
• Main Authors: Min, Jung-Hong, Li, Kuang-Hui, Kim, Yong-Hyeon, Min, Jung-Wook, Kang, Chun Hong, Kim, Kyoung-Ho, Lee, Jae-Seong, Lee, Kwang Jae, Jeong, Seong-Min, Lee, Dong-Seon, Bae, Si-Young, Ng, Tien Khee, Ooi, Boon S.
• Format: Journal Article
• Language: English
• Published: United States 24.03.2021
• Subjects: membranes; Ga2O3; solar-blind photodetectors; epitaxial graphene; van der Waals epitaxy; energy release rate
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c01042

Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga O nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga O direct-epitaxy on the EG. The β-Ga O layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.