Room-Temperature Patterning of Nanoscale MoS 2 under an Electron Beam
Molybdenum disulfide (MoS ) is traditionally grown at a high temperature and subsequently patterned to study its electronic properties or make devices. This method imposes severe limitations on the shape and size of MoS crystals that can be patterned precisely at required positions. Here, we describ...
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Published in | ACS applied materials & interfaces Vol. 12; no. 14; pp. 16772 - 16781 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
08.04.2020
|
Subjects | |
Online Access | Get full text |
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Summary: | Molybdenum disulfide (MoS
) is traditionally grown at a high temperature and subsequently patterned to study its electronic properties or make devices. This method imposes severe limitations on the shape and size of MoS
crystals that can be patterned precisely at required positions. Here, we describe a method of direct nanoscale patterning of MoS
at room temperature by exposing a molybdenum thiocubane single-source precursor to a beam of electrons. Molybdenum thiocubanes with various alkylxanthate moieties [Mo
S
(ROCS
)
, where R = alkyl] were prepared using a "self-assembly" approach. Micro-Raman and micro-FTIR spectroscopic studies suggest that exposure to a relatively smaller dose of electrons results in the breakdown of xanthate moieties, leading to the formation of MoS
. High-resolution transmission electron micrographs suggest that the growth of MoS
most likely happens along (100) planes. An electron-beam-induced chemical transformation of a molybdenum thiocubane resist was exploited to fabricate sub-10 nm MoS
lines and dense dots as small as 13 nm with a pitch of 33 nm. Since this technique does not require the liftoff and etching steps, patterning of MoS
with interesting shapes, sizes, and thicknesses potentially leading to tunable band gap is possible. |
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ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.9b22229 |