Interfacial Regulation toward Efficient CsPbBr 3 Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes

Inverted perovskite light-emitting diodes (PeLEDs) based on quantum dots (QDs) are some of the most promising candidates for next-generation lighting and display applications. Due to the strong fluorescence quenching caused by zinc oxide, high performance in such inverted devices remains challenging...

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Published inACS applied materials & interfaces Vol. 16; no. 9; pp. 11715 - 11721
Main Authors Shen, Piaoyang, Zhang, Xuanyu, Wu, Ruifa, Zhang, Ting, Qian, Lei, Xu, Wei, Kang, Kai, Zhao, Dewei, Xiang, Chaoyu
Format Journal Article
LanguageEnglish
Published United States 06.03.2024
Subjects
external quantum efficiency
perovskite light-emitting diodes
high performance
zinc oxide
buffer layer
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Summary:Inverted perovskite light-emitting diodes (PeLEDs) based on quantum dots (QDs) are some of the most promising candidates for next-generation lighting and display applications. Due to the strong fluorescence quenching caused by zinc oxide, high performance in such inverted devices remains challenging. Here, we report an efficient inverted green CsPbBr QDs LED using an emitting buffer layer. Ultrathin CsPbBr QD emitters act as the buffer layer to reduce the interface luminescence quenching reaction at the ZnO/upper emitting layer interface, increasing the probability of exciton recombination within the emissive layer and regulating the charge transport, leading to effective carrier recombination. The resulting device exhibits an external quantum efficiency of 13.1%, enhanced by about 4.7 times compared with that without a buffer layer device. This work provides a path to fabricating high-performance inverted PeLEDs.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.3c18816