All Si 3 N 4 Nanowires Membrane Based High-Performance Flexible Solid-State Asymmetric Supercapacitor
Recently, much attention has been drawn in the development of flexible energy storage devices due to the increasing demands for flexible/portable electronic devices with high energy density, low weight, and good flexibility. Herein, vertically oriented graphene nanosheets (VGNs) are in situ fabricat...
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Published in | Small (Weinheim an der Bergstrasse, Germany) Vol. 17; no. 18; p. e2008056 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Germany
01.05.2021
|
Subjects | |
Online Access | Get full text |
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Summary: | Recently, much attention has been drawn in the development of flexible energy storage devices due to the increasing demands for flexible/portable electronic devices with high energy density, low weight, and good flexibility. Herein, vertically oriented graphene nanosheets (VGNs) are in situ fabricated on the surface of free-standing and flexible Si
N
nanowires (NWs) membrane by plasma-enhanced chemical vapor deposition (PECVD), which are directly used as flexible nanoscale conductive substrates. NiCo
O
hollow nanospheres (HSs) and FeOOH amorphous nanorods (NRs) are finally prepared on Si
N
@VGNs, which are served as the positive and negative electrodes, respectively. Profiting from the structural merits, the synthesized Si
N
@VGNs@NiCo
O
and Si
N
@VGNs@FeOOH
membrane electrodes exhibit remarkable electrochemical performance. Using Si
N
membrane as the separator, the assembled all Si
N
membrane-based flexible solid-state asymmetric supercapacitor (ASC) with a wide operating potential window of 1.8 V yields the outstanding energy density of 96.3 Wh kg
, excellent cycling performance (91.7% after 6000 cycles), and good mechanical flexibility. More importantly, this work provides a rational design strategy for the preparation of flexible electrode materials and broadens the applications of Si
N
in the field of energy storage. |
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ISSN: | 1613-6810 1613-6829 |
DOI: | 10.1002/smll.202008056 |