640 \,\times\,512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a refle...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 43; no. 3; pp. 230 - 237
Main Authors Gunapala, S.D., Bandara, S.V., Hill, C.J., Ting, D.Z., Liu, J.K., Rafol, B., Blazejewski, E.R., Mumolo, J.M., Keo, S.A., Krishna, S., Chang, Y.-C., Shott, C.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2007
Subjects
Electromagnetic wave absorption
Focal plane array
infrared detector
Infrared detectors
Infrared imaging
Optical imaging
Optical scattering
Photodetectors
Photonic band gap
Pixel
Quantum dots
quantum dots (QDs)
Temperature
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Summary:Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mum, with peak detectivity reaching ~1times10 10 Jones at 77 K. The devices were fabricated into the first long-wavelength 640times512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2006.889645