Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb heterostructures

• Published in: Applied surface science Vol. 244; no. 1-4; pp. 297 - 300
• Main Authors: GAO, Y. Z, GONG, X. Y, FANG, W. Z, DENG, H. Y, HUB, G. J, AOYAMA, M, YAMAGUCHI, T, DAI, N
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 15.05.2005
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Optical properties of specific thin films, surfaces, and low-dimensional structures; Physics; Zinc sulfides; Si3N4; Inorganic compounds; Semiconductor materials; Indium antimonides; Ternary compounds; Transition element compounds; Arsenic Phosphides; XRD; Transmittance; Indium arsenides; Indium phosphides; FTIR; Silicon nitrides; Quaternary compounds; Heterostructures; Antireflection coatings; Deposition; ZnS; 68. 47. Fg InAsSb/InAsPSb
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.10.123

The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si3N4 top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different conditions. The different effects of Si3N4 and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are discussed.