1.3- \hbox GaInAsN Vertical-Cavity Surface-Emitting Lasers by Oxide-Planarized and Surface-Relief Processes for Single-Mode Operation

• Published in: IEEE electron device letters Vol. 28; no. 2; pp. 120 - 122
• Main Authors: Lee, Feng-Ming, Tsai, Chia-Lung, Hu, Chih-Wei, Huang, Kun-Fu, Wu, Meng-Chyi, Ko, Sun-Chien
• Format: Journal Article
• Language: English
• Published: IEEE 01.02.2007
• Subjects: Apertures; Filtering; GaInAsN; hbox{SiO}_{x} planarization process; Laser modes; planar-type vertical-cavity surface-emitting lasers (VCSELs); Planarization; Quantum well lasers; Silicon; Surface emitting lasers; surface relief; Temperature; Threshold current; Vertical cavity surface emitting lasers
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2006.889512

In this letter, we investigate and characterize the 1.3-mum single-mode vertical-cavity surface-emitting lasers (VCSELs) with two GaInAsN strained multiple quantum wells as the active region. Surface relief technique and a thick silicon oxide were used for the spatial mode filtering and the planarization processing, respectively. The VCSELs with a 5-mum-diameter surface-relief aperture and a 12-mum-diameter oxide-confined aperture at room temperature exhibit a threshold current of 3 mA, a slope efficiency of 0.14 mW/mA, a maximum operation temperature of 90 degC, and a single-mode behavior. These VCSELs show a maximum light output power of 1 mW for the single fundamental mode with a transverse-mode suppression of more than 30 dB and also show a clear eye-opening feature operated at 2.488 Gb/s and 12.6 mA