P‐1.2: Improvement of Mobility and Reliability of a‐IGZO TFTs by Dual‐Gate Driving

In this work, a IGZO thin‐film transistor with double‐gate structure is studied to realize high mobility and strong reliability simultaneously. Enhancement‐mode operation that is essential to the constitution of a low‐power digital circuitry and high current demand of mini‐LED and micro‐LED display...

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Bibliographic Details
Published inSID International Symposium Digest of technical papers Vol. 53; no. S1; pp. 575 - 577
Main Authors Luo, Chuanbao, Kai, Zhou, Xian, Xiujuan, Zhang, Lijun, Seo, Hyun-Sik, Zhang, Xin, Yao, Jiangbo
Format Journal Article
LanguageEnglish
Published Campbell Wiley Subscription Services, Inc 01.10.2022
Subjects
Bulk accumulation
Circuits
Dual-gate driving
Electric fields
Energy bands
High mobility
High reliability
Indium gallium zinc oxide
Semiconductor devices
Thin film transistors
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Summary:In this work, a IGZO thin‐film transistor with double‐gate structure is studied to realize high mobility and strong reliability simultaneously. Enhancement‐mode operation that is essential to the constitution of a low‐power digital circuitry and high current demand of mini‐LED and micro‐LED display is easily achieved when the top and bottom gate electrodes are tied together. The device mobility and the subthreshold swing are improved from 16.2 cm2/Vs and 0.29V/dec to 22.4 cm2/Vs and 0.24V/dec, respectively, compared with the single‐gate (SG) structure. High mobility is attributed to the dual channel of double gate coupling. Finally, the mechanism of NBTiS improvement also has clarified in terms of energy band and electric field of the double gate structure.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16028