80‐4: Highly Reliable, As‐Grown Crystalline InGaZnO TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of High‐Resolution AMOLED Display

We report a low‐cost method for growing highly‐oriented crystalline InGaZnO (C‐IGZO) for a high‐resolution, active‐matrix thin‐film transistor (TFT) backplane for organic light‐emitting diode displays using spray pyrolysis. The self‐aligned, coplanar oxide TFT with an as‐grown C‐IGZO channel layer d...

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Bibliographic Details
Published inSID International Symposium Digest of technical papers Vol. 55; no. 1; pp. 1119 - 1122
Main Authors Bae, Jinbaek, Ali, Arqum, Islam, Md Mobaidul, Jeong, Myeonggi, Lee, Junmi, Chang, Yeoungjin, Jang, Jin
Format Journal Article
LanguageEnglish
Published Campbell Wiley Subscription Services, Inc 01.06.2024
Subjects
Active matrix displays
Backplanes
crystalline InGaZnO
high mobility coplanar TFT
Indium gallium zinc oxide
Light emitting diodes
Low‐cost display manufacturing
Semiconductor devices
short‐channel electronics
Spray pyrolysis
Thin film transistors
Threshold voltage
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ISSN0097-966X
2168-0159
DOI10.1002/sdtp.17735

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Summary:We report a low‐cost method for growing highly‐oriented crystalline InGaZnO (C‐IGZO) for a high‐resolution, active‐matrix thin‐film transistor (TFT) backplane for organic light‐emitting diode displays using spray pyrolysis. The self‐aligned, coplanar oxide TFT with an as‐grown C‐IGZO channel layer demonstrates a threshold voltage of‐0.35 V, saturation mobility of 33.99 cm2 V‐1 s‐1 , and subthreshold swing of 0.15 Vdec‐1, with an on/off current ratio exceeding 108 . Moreover, the C‐IGZO TFT with a channel length of 1.16 μm exhibits excellent operational stability under bias temperature stress.
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ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17735