P‐156: Efficiency Improvement Mechanism Analysis of Sidewall Passivation GaN based Micro‐LEDs by Atomic Layer Deposition

Sidewall passivation using atomic layer deposition (ALD) can efficiently improve external quantum efficiency (EQE). Such treatment increases EQE, a combination of internal quantum efficiency (IQE) and light extraction efficiency (LEE), primarily by curtailing surface recombination according to the A...

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Bibliographic Details
Published inSID International Symposium Digest of technical papers Vol. 55; no. 1; pp. 1981 - 1983
Main Authors Zhanghu, Mengyuan, Liu, Yibo, Liu, Zhaojun
Format Journal Article
LanguageEnglish
Published Campbell Wiley Subscription Services, Inc 01.06.2024
Subjects
Atomic layer epitaxy
Atomic properties
EQE
IQE
LEE
Micro-LED
Passivity
Quantum efficiency
Radiative recombination
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Summary:Sidewall passivation using atomic layer deposition (ALD) can efficiently improve external quantum efficiency (EQE). Such treatment increases EQE, a combination of internal quantum efficiency (IQE) and light extraction efficiency (LEE), primarily by curtailing surface recombination according to the ABC model. Determined by the ratio of radiative recombination rate to total recombination rate, the IQE of an LED holds a significant correlation with the diode's ideality factor in the Shockley model. In this paper, we analysis the mechanism of ALD sidewall passivation enhancing device performance in detail from the aspects of electrical performance improvement and optical performance improvement.
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ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17983