The modelling of silicon oxidation from 1×10-5 to 20 atmospheres
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Published in | Journal of electronic materials Vol. 16; no. 1; pp. 45 - 55 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
1987
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Subjects | |
Online Access | Get full text |
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ISSN: | 0361-5235 1543-186X |
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DOI: | 10.1007/BF02667790 |