Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 51; no. 4S; p. 4
Main Authors Ishikawa, Takayuki, Saitoh, Masumi, Ota, Kensuke, Tanaka, Chika, Numata, Toshinori
Format Journal Article
LanguageEnglish
Published 01.04.2012
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.51.04DC05