Synthesis of an AlN Polycrystalline Bulk Layer and Nanotubes by Using NH 3 and Bi

A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH 3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmissio...

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Published inJournal of the American Ceramic Society Vol. 92; no. 11; pp. 2578 - 2582
Main Authors Morito, Haruhiko, Ide, Tomoyuki, Karahashi, Taiki, Orikasa, Hironori, Yamada, Takahiro, Yamane, Hisanori
Format Journal Article
LanguageEnglish
Published 01.11.2009
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Abstract A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH 3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmission electron microscopy. The platelet grains of AlN with a size of 0.1–1.0 μm and having preferred orientation of the c ‐axis perpendicular to the layer were formed at the crucible side. Nanotubes 6–15 μm long and about 20–100 nm thick grew on the gas phase side of the layer.
AbstractList A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH 3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmission electron microscopy. The platelet grains of AlN with a size of 0.1–1.0 μm and having preferred orientation of the c ‐axis perpendicular to the layer were formed at the crucible side. Nanotubes 6–15 μm long and about 20–100 nm thick grew on the gas phase side of the layer.
Author Ide, Tomoyuki
Orikasa, Hironori
Yamada, Takahiro
Yamane, Hisanori
Morito, Haruhiko
Karahashi, Taiki
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