Synthesis of an AlN Polycrystalline Bulk Layer and Nanotubes by Using NH 3 and Bi

A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH 3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmissio...

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Published inJournal of the American Ceramic Society Vol. 92; no. 11; pp. 2578 - 2582
Main Authors Morito, Haruhiko, Ide, Tomoyuki, Karahashi, Taiki, Orikasa, Hironori, Yamada, Takahiro, Yamane, Hisanori
Format Journal Article
LanguageEnglish
Published 01.11.2009
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Summary:A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH 3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmission electron microscopy. The platelet grains of AlN with a size of 0.1–1.0 μm and having preferred orientation of the c ‐axis perpendicular to the layer were formed at the crucible side. Nanotubes 6–15 μm long and about 20–100 nm thick grew on the gas phase side of the layer.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1551-2916.2009.03286.x