Defect Delineation by Electrochemical Cu Deposition in p-type Si Wafers

Gate oxide integrity (GOI) is very important Si wafers, but it is very difficult to explain the origin of the oxide breakdown because the gate oxide is destroyed by the strong electric field. In this study, we detect the origin of the breakdown without destroying the gate oxide using copper reductio...

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Bibliographic Details
Published inECS transactions Vol. 11; no. 3; pp. 213 - 217
Main Authors Kim, Kwang-Salk, Ham, Ho Chan, Hwang, Don-Ha, Lee, Bo-Young
Format Journal Article
LanguageEnglish
Published 28.09.2007
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Summary:Gate oxide integrity (GOI) is very important Si wafers, but it is very difficult to explain the origin of the oxide breakdown because the gate oxide is destroyed by the strong electric field. In this study, we detect the origin of the breakdown without destroying the gate oxide using copper reduction by the potential sweep method, followed by SEM/EDS and TEM analysis. These results show that the crystal defects near the gate oxide induce the growth of copper agglomerates without destroying the gate oxide. Hence, it can supply information on the origin of GOI fails by a simple electrochemical study.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2778664