Strained Si via Plasma Enhanced dTCE Bonding

We present various pre-bonding treatments in conjunction with co-implantation cleaving kinetics en route to producing strained silicon on quartz (SSOQ). This surface activation study presents the ground work for elevated temperature bonding required to obtain strained-Si via differential thermal coe...

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Bibliographic Details
Published inECS transactions Vol. 3; no. 6; pp. 99 - 106
Main Authors Sood, Sumant, Belford, Rona
Format Journal Article
LanguageEnglish
Published 20.10.2006
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Summary:We present various pre-bonding treatments in conjunction with co-implantation cleaving kinetics en route to producing strained silicon on quartz (SSOQ). This surface activation study presents the ground work for elevated temperature bonding required to obtain strained-Si via differential thermal coefficient of expansion (dTCE) wafer bonding. A novel pre-bonding remote plasma surface activation process is presented. Plasma parameters: exposure time, gas species, etc. are varied. Remote plasma effects are compared with standard RCA surface activation. Cleaving kinetics were investigated using co-implanted wafers of B2+, He+ and P2+ with H+.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2357059