Fabrication and Characterization of IC Compatible Through-Wafer Polysilicon Interconnects

A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes providing the process quality test. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposit...

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Bibliographic Details
Published inECS transactions Vol. 2; no. 25; pp. 27 - 31
Main Authors Luusua, Ismo, Henttinen, Kimmo, Pekko, Panu, Vehmas, Tapani
Format Journal Article
LanguageEnglish
Published 07.02.2007
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Summary:A method for processing IC compatible through-wafer electrical interconnects is presented and characterized with high resistivity substrate PIN diodes providing the process quality test. Process methods and results are reported and discussed in detail, including ICP deep etching, polysilicon deposition by LPCVD with in-situ boron doping and planarization by grinding and CMP.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2409015