Robust Ultrathin (20-25 nm)Trilayer Dielectric Low k Cu Damascene Cap for Sub-30 nm Nanoelectric Devices

Robust ultrathin (20 nm) trilayer low k SiNx/SiNy/SiCNH dielectric Cu caps (k ~4.0-4.2) with post ultraviolet (UV) cure compressive stress were developed and integrated into 22nm CMOS Back End Of Line (BEOL) devices. The new cap reduces device's capacitance (~ 4 %) and enhances stress stability...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 41; no. 43; pp. 3 - 9
Main Authors Nguyen, Son V., Haigh, Thomas, Tagami, Masayoshi, Grill, Alfred, Cohen, Stephan, Shobha, Hosadurga, Hu, Chao-Kun, Adams, Ed, Liniger, Eric, Shaw, Thomas, Cheng, Tien, Yusuff, Hakeem, Xu, Yiheng, Ko, Tze-Man, Molis, Steven, Spooner, Terry, Skordas, Spyridon, Liu, Xiao Hu, Bonilla, Griselda, Edelstein, Dan
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 04.05.2012
Online AccessGet full text

Cover

More Information
Summary:Robust ultrathin (20 nm) trilayer low k SiNx/SiNy/SiCNH dielectric Cu caps (k ~4.0-4.2) with post ultraviolet (UV) cure compressive stress were developed and integrated into 22nm CMOS Back End Of Line (BEOL) devices. The new cap reduces device's capacitance (~ 4 %) and enhances stress stability in Cu-Ultra low k structures
ISSN:1938-5862
1938-6737
DOI:10.1149/1.4717497