Site-Selective Halogenation of Polyoxovanadate Clusters: Atomically Precise Models for Electronic Effects of Anion Doping in VO 2
We report the synthesis and characterization of a monochloride-functionalized polyoxovanadate-alkoxide (POV-alkoxide) cluster, which can serve as a molecular model for halogen-doped vanadium oxide (VO ) materials that have recently attracted great interest as advanced materials for energy-saving sma...
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Published in | Journal of the American Chemical Society Vol. 142; no. 2; pp. 1049 - 1056 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
15.01.2020
|
Online Access | Get full text |
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Summary: | We report the synthesis and characterization of a monochloride-functionalized polyoxovanadate-alkoxide (POV-alkoxide) cluster, which can serve as a molecular model for halogen-doped vanadium oxide (VO
) materials that have recently attracted great interest as advanced materials for energy-saving smart window applications. Chloride-substituted variants of the Lindqvist vanadium-oxide cluster were obtained via two distinct chemical pathways: (1) direct halogenation of the isovalent parent POV-alkoxide architecture, [V
O
(OC
H
)
]
with AlCl
and (2) coordination of a chloride ion to a coordinatively unsaturated vanadium center within a cluster that bears a single oxygen-atom vacancy, [V
O
(OC
H
)
]
. Notably, our direct halogenation constitutes the first example of selective, single-site halide doping of homometallic metal oxide clusters. The chloride-containing compound, [V
O
Cl(OC
H
)
]
, was characterized by
H NMR spectroscopy and X-ray crystallography. The electronic structure of the chloride-functionalized POV-alkoxide cluster was established by infrared, electronic absorption, and X-ray photoelectron spectroscopy and revealed formation of a site-differentiated V
ion upon halogenation. Cyclic voltammetry was employed to assess the electrochemical response of halide doping. A comparison of the Cl-VO
model to the fully oxygenated cluster, [V
O
(OC
H
)
]
, provides molecular-level insights into a new proposed mechanism by which halogenation increases the carrier density in solid VO
, namely, through prompting charge separation within the material. |
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ISSN: | 0002-7863 1520-5126 |
DOI: | 10.1021/jacs.9b11874 |