Site-Selective Halogenation of Polyoxovanadate Clusters: Atomically Precise Models for Electronic Effects of Anion Doping in VO 2

We report the synthesis and characterization of a monochloride-functionalized polyoxovanadate-alkoxide (POV-alkoxide) cluster, which can serve as a molecular model for halogen-doped vanadium oxide (VO ) materials that have recently attracted great interest as advanced materials for energy-saving sma...

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Published inJournal of the American Chemical Society Vol. 142; no. 2; pp. 1049 - 1056
Main Authors Petel, Brittney E, Meyer, Rachel L, Maiola, Michela L, Brennessel, William W, Müller, Astrid M, Matson, Ellen M
Format Journal Article
LanguageEnglish
Published United States 15.01.2020
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Summary:We report the synthesis and characterization of a monochloride-functionalized polyoxovanadate-alkoxide (POV-alkoxide) cluster, which can serve as a molecular model for halogen-doped vanadium oxide (VO ) materials that have recently attracted great interest as advanced materials for energy-saving smart window applications. Chloride-substituted variants of the Lindqvist vanadium-oxide cluster were obtained via two distinct chemical pathways: (1) direct halogenation of the isovalent parent POV-alkoxide architecture, [V O (OC H ) ] with AlCl and (2) coordination of a chloride ion to a coordinatively unsaturated vanadium center within a cluster that bears a single oxygen-atom vacancy, [V O (OC H ) ] . Notably, our direct halogenation constitutes the first example of selective, single-site halide doping of homometallic metal oxide clusters. The chloride-containing compound, [V O Cl(OC H ) ] , was characterized by H NMR spectroscopy and X-ray crystallography. The electronic structure of the chloride-functionalized POV-alkoxide cluster was established by infrared, electronic absorption, and X-ray photoelectron spectroscopy and revealed formation of a site-differentiated V ion upon halogenation. Cyclic voltammetry was employed to assess the electrochemical response of halide doping. A comparison of the Cl-VO model to the fully oxygenated cluster, [V O (OC H ) ] , provides molecular-level insights into a new proposed mechanism by which halogenation increases the carrier density in solid VO , namely, through prompting charge separation within the material.
ISSN:0002-7863
1520-5126
DOI:10.1021/jacs.9b11874