Insulator to metal transition induced by surface plasmon polaritons in VO 2 /Au thin films

We report on a new mechanism capable of inducing the insulator-metal transition (IMT) in VO via surface plasmon polaritons (SPP). Our theoretical model predicts that for a bilayer Au-VO sample an enhanced electromagnetic energy density at the Au-VO interface will occur at 1064nm laser wavelength whe...

Full description

Saved in:
Bibliographic Details
Published inOptics express Vol. 26; no. 20; p. 25657
Main Authors Madaras, S E, Creeden, J, Kittiwatanakul, S, Lu, J, Novikova, I, Lukaszew, R A
Format Journal Article
LanguageEnglish
Published United States 01.10.2018
Online AccessGet full text

Cover

More Information
Summary:We report on a new mechanism capable of inducing the insulator-metal transition (IMT) in VO via surface plasmon polaritons (SPP). Our theoretical model predicts that for a bilayer Au-VO sample an enhanced electromagnetic energy density at the Au-VO interface will occur at 1064nm laser wavelength when SPPs are excited in the Au layer. This effect can assist the IMT in the VO layer and at the same time, the SPP absorption can be used to detect it. Changes in the optical properties of the VO thin layer in such structure can be observed in the reflected light in Kretschmann configuration, via a shift in the nadir location due to light absorption at resonance. This optical mechanism occurs at 2mW threshold transition energies and fully saturates at 5mW.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.26.025657