Flux effect on defect evolution in uranium dioxide under electronic and ballistic regimes

•Coupled effect of electronic and nuclear energy loss on defect was studied in UO2.•The impact of flux ratio on dislocation loops and local disorder was determined.•The defect clustering or recombination is promoted depending on the flux. The microstructure evolution of ion-irradiated UO2 was evalua...

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Bibliographic Details
Published inJournal of nuclear materials Vol. 599; p. 155236
Main Authors Gutierrez, G., Bricout, M., Roux, L., Onofri, C.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2024
Subjects
Defects
Dislocations
Dual ion beam irradiation
In situ Raman
Ionization
TEM
Uranium dioxide
Dual ion beam irradiation
Ionization
In situ Raman
Uranium dioxide
TEM
Defects
Dislocations
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Summary:•Coupled effect of electronic and nuclear energy loss on defect was studied in UO2.•The impact of flux ratio on dislocation loops and local disorder was determined.•The defect clustering or recombination is promoted depending on the flux. The microstructure evolution of ion-irradiated UO2 was evaluated by in situ Raman spectroscopy. Transmission electron microscopy (TEM) was also conducted for selected irradiation conditions. The UO2 samples were irradiated with single- (900 keV I ions) or dual-ion beams (900 keV I and 27 MeV Fe or 36 MeV W ions) with different ratios between the high- and low-velocity ion flux (R). The analysis of the damage build-up shows that the electronic excitations deposited by the high-velocity ions affect the formation and evolution of defects induced by nuclear energy loss. In addition, the kinetics of dislocation evolution are more advanced when the flux ratio promotes electronic excitations. Consequently, a higher R value favors electronic excitations, leading to greater microstructural evolution.
ISSN:0022-3115
1873-4820
DOI:10.1016/j.jnucmat.2024.155236