Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films

• Published in: Nanoscale Vol. 12; no. 25; pp. 13421 - 13430
• Main Authors: So-Jung, Yoon, Moon, Seung-Eon, Sung-Min, Yoon
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 02.07.2020
• Subjects: Aluminum; Arrays; Ferroelectric materials; Ferroelectricity; Field effect transistors; Hafnium oxide; Insulators; MIS (semiconductors); Polarization characteristics; Pulse amplitude modulation; Resistance; Semiconductor devices; Switching; Thin films; Transistors

Human brain-like synaptic behaviors of the ferroelectric field-effect transistors (FeFETs) were emulated by introducing the metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate stacks employing Al-doped HfO2 (Al:HfO2) ferroelectric thin films even at a low operation voltage. The synaptic p...