Passivation Mechanisms of Atomic Layer-deposited AlO x Films and AlO x /SiO x Stack

• Published in: IOP conference series. Materials Science and Engineering Vol. 585; no. 1; p. 12026
• Main Authors: Gong, Lei, Zhou, Chunlan, Zhu, Junjie, Wang, Wenjing, Ji, Fangxu
• Format: Journal Article
• Language: English
• Published: 01.07.2019
• ISSN: 1757-8981; 1757-899X
• DOI: 10.1088/1757-899X/585/1/012026

Abstract A new passivation layer of AlO x /SiO x were prepared, in which 80 nm SiO x was prepared by spin-coating perhydropolysilazane (PHPS) and annealed at 450°C. In order to compare the passivation effect of single AlO x layers and the SiO x /AlO x stack on silicon surface, the fixed charge (Q f ) in the passivated layers and chemical passivation effect were obtained by corona charge method. Fourier transform infrared spectroscopy (FTIR) and Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used to investigate the Si-H, Si-O bonds and the hydrogen profile in the passivation layer, respectively. The result reveals that the single layer of AlO x provides good field effect with a large amount of negative Q f . Furthermore, SiO x capping on AlO x have more excellent chemical passivation because of amount of H saturate the dangling bonds on the silicon surface.