Polarization enhanced carrier performance in GaN/WSSe heterostructures for overall water splitting: A first-principles study
[Display omitted] •2D GaN/WSSe vdW heterostructures with enhanced photocatalytic water-splitting efficiency via polarization-induced electric field.•Band alignment tunable from type-II to type-III via polarization-induced Stark effect.•Achieved high carrier mobility (∼8601.5 cm2/Vs) and long lifetim...
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Published in | Applied surface science Vol. 682; p. 161734 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.02.2025
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Subjects | |
Online Access | Get full text |
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Summary: | [Display omitted]
•2D GaN/WSSe vdW heterostructures with enhanced photocatalytic water-splitting efficiency via polarization-induced electric field.•Band alignment tunable from type-II to type-III via polarization-induced Stark effect.•Achieved high carrier mobility (∼8601.5 cm2/Vs) and long lifetime (∼6.35 ps)•Thickness-dependent polarization significantly boosts charge transfer and carrier dynamics.
Designing low-dimensional photocatalysts with high efficiency has generated substantial interest for clean energy applications, particularly regarding the optimal carrier mobility and lifetime. Here, the structural and electronic properties of two-dimensional heterostructures composed of polar GaN and WSSe were systematically investigated by first-principles calculations. Tunable band alignment can be effectively achieved in GaN/WSSe heterostructures from type-II to type-III through polarization-induced Stark effect. Interestingly, type-II (2L GaN) and type-III (3L GaN) heterostructures in Ga-Se, N-S, and N-Se polarization arrangements exhibit the capability for spontaneous overall photocatalytic water splitting, along with remarkably high charge carrier concentration (∼8.23 × 1011 cm−2), carrier mobility (∼8601.5 cm2/Vs), and extended carrier lifetime (∼6.35 ps) in Ga(3L)-Se-AA-2. This unique behavior arises from the intrinsic polarization of the heterostructures, pumping the electrons from WSSe side to GaN side. These findings not only highlight the significant potential of GaN/WSSe heterostructures as photocatalysts for overall water splitting but also suggest avenues for developing novel polarization-enhanced heterostructures. |
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ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2024.161734 |