High-temperature x-ray characterization of GaN epitaxially grown on Sc 2 O 3 /Y 2 O 3 /Si(1 1 1) heterostructures
The thermal behaviour of GaN epitaxially grown on a Sc 2 O 3 /Y 2 O 3 bilayer buffer on the Si(1 1 1) substrate is studied between room temperature (RT) and 800 °C by x-ray diffraction of symmetrical and asymmetrical reflections. It is found that the GaN layer is in-plane mediated by the oxide buffe...
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| Published in | Journal of physics. D, Applied physics Vol. 44; no. 31; p. 315403 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
10.08.2011
|
| Online Access | Get full text |
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| Summary: | The thermal behaviour of GaN epitaxially grown on a Sc
2
O
3
/Y
2
O
3
bilayer buffer on the Si(1 1 1) substrate is studied between room temperature (RT) and 800 °C by x-ray diffraction of symmetrical and asymmetrical reflections. It is found that the GaN layer is in-plane mediated by the oxide buffer completely fixed to the Si substrate, which indicates the absence of any temperature related compliance behaviour of the oxide buffer. The GaN grows at 720 °C already slightly tensile strained on top of the larger Sc
2
O
3
lattice, and this strain increases further during cooling down to RT due to different coefficients of thermal expansion of GaN and the Si substrate. |
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| ISSN: | 0022-3727 1361-6463 |
| DOI: | 10.1088/0022-3727/44/31/315403 |