Orientation selective epitaxial growth of CeO 2 layers on Si(1 0 0) substrates using reactive DC magnetron sputtering with substrate bias

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 271; no. 1-2; pp. 176 - 183
Main Authors Inoue, Tomoyasu, Ohashi, Masayuki, Sakamoto, Naomichi, Shida, Shigenari
Format Journal Article
LanguageEnglish
Published 01.10.2004
Online AccessGet full text

Cover

Author Shida, Shigenari
Ohashi, Masayuki
Inoue, Tomoyasu
Sakamoto, Naomichi
Author_xml – sequence: 1
  givenname: Tomoyasu
  surname: Inoue
  fullname: Inoue, Tomoyasu
– sequence: 2
  givenname: Masayuki
  surname: Ohashi
  fullname: Ohashi, Masayuki
– sequence: 3
  givenname: Naomichi
  surname: Sakamoto
  fullname: Sakamoto, Naomichi
– sequence: 4
  givenname: Shigenari
  surname: Shida
  fullname: Shida, Shigenari
BookMark eNo9kMtOwzAQAH0oEm3hF9Ae4ZCwdvM8ogAFqVIPwNlyzLo4SpPKdin9BP6aRAVOK61mR9qZsUnXd8TYFceYI89um7jR7ug3ro8FYhJjHmMqJmyKKESEIinO2cz7BnGgOU7Z99pZ6oIKtu_AU0s62E8C2tmgvqxqYVAdwgf0Bipag4BWHcl5GOgXe80BAW_A72sfnArkYe9ttwFH6uS5r2CrNh0FN-p3-xDIjcDBDs7_M6it8hfszKjW0-XvnLO3x4fX6ilarZfP1d0q0nx4IsqSBRVckOFZjrw0OjVYUq4xM0UpUhw2dVLWJiGdkOL5e1EkKWFe67JGrHExZ9nJq13vvSMjd85ulTtKjnKMKBv5F1GOESXmcoi4-AG1_G5Z
CitedBy_id crossref_primary_10_1016_j_surfrep_2014_12_001
crossref_primary_10_3390_ma11071114
crossref_primary_10_1016_j_mssp_2014_10_010
crossref_primary_10_1021_nn2037576
crossref_primary_10_1007_s00339_017_1512_2
crossref_primary_10_1016_j_tsf_2008_08_059
crossref_primary_10_1016_j_jcrysgro_2007_02_013
crossref_primary_10_1002_adfm_201002135
crossref_primary_10_1016_j_mee_2014_01_014
crossref_primary_10_1016_j_tsf_2010_12_013
crossref_primary_10_1016_j_jcrysgro_2005_11_102
crossref_primary_10_1016_j_materresbull_2015_05_041
crossref_primary_10_1016_j_tsf_2010_12_201
crossref_primary_10_1088_1742_6596_100_8_082014
crossref_primary_10_1149_1_2975822
crossref_primary_10_1116_1_4863301
crossref_primary_10_1002_adma_200901867
crossref_primary_10_1016_j_ceramint_2022_05_158
crossref_primary_10_1116_1_2435386
crossref_primary_10_1002_jrs_2140
crossref_primary_10_1016_j_mee_2018_11_013
crossref_primary_10_1063_1_2828692
Cites_doi 10.1063/1.1526169
10.1063/1.347442
10.1103/PhysRevLett.53.2331
10.1063/1.103202
10.1063/1.101908
10.1143/JJAP.32.1765
10.1557/mrs2002.71
10.1116/1.1626644
10.1557/PROC-341-107
10.1063/1.1356451
10.1063/1.105646
10.1557/PROC-474-333
10.1143/JJAP.33.270
10.1143/JJAP.29.L1199
10.1063/1.1461059
10.1143/JJAP.34.L688
10.1016/0022-0248(93)90184-X
10.1063/1.1351849
10.1557/PROC-474-321
10.1557/PROC-341-101
10.1063/1.115362
ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1016/j.jcrysgro.2004.07.052
DatabaseName CrossRef
DatabaseTitle CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Chemistry
EndPage 183
ExternalDocumentID 10_1016_j_jcrysgro_2004_07_052
GroupedDBID --K
--M
-~X
.~1
0R~
1B1
1RT
1~.
1~5
29K
4.4
457
4G.
53G
5GY
5VS
7-5
71M
8P~
9JN
AABNK
AACTN
AAEDT
AAEDW
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AAXKI
AAXUO
AAYXX
ABFNM
ABJNI
ABMAC
ABNEU
ABXDB
ACDAQ
ACFVG
ACGFS
ACIWK
ACNNM
ACRLP
ADBBV
ADEZE
ADIYS
ADMUD
ADVLN
AEBSH
AEKER
AENEX
AFFNX
AFJKZ
AFKWA
AFTJW
AGHFR
AGUBO
AGYEJ
AHHHB
AI.
AIEXJ
AIKHN
AITUG
AIVDX
AJOXV
AKRWK
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BKOJK
BLXMC
CITATION
CS3
D-I
DU5
EBS
EFJIC
EJD
EO8
EO9
EP2
EP3
F5P
FDB
FEDTE
FGOYB
FIRID
FNPLU
FYGXN
G-2
G-Q
GBLVA
HMV
HVGLF
HZ~
IHE
J1W
KOM
M24
M38
M41
MO0
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SDF
SDG
SDP
SES
SEW
SMS
SPC
SPCBC
SPD
SPG
SSQ
SSZ
T5K
TN5
VH1
WUQ
XPP
ZMT
~02
~G-
ID FETCH-LOGICAL-c1002-643e812ef167019fc5f09e7c06f892509fcb49bf4ec4ea17d8845e07bc9b00b03
ISSN 0022-0248
IngestDate Thu Sep 26 18:05:20 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 1-2
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c1002-643e812ef167019fc5f09e7c06f892509fcb49bf4ec4ea17d8845e07bc9b00b03
PageCount 8
ParticipantIDs crossref_primary_10_1016_j_jcrysgro_2004_07_052
PublicationCentury 2000
PublicationDate 2004-10-00
PublicationDateYYYYMMDD 2004-10-01
PublicationDate_xml – month: 10
  year: 2004
  text: 2004-10-00
PublicationDecade 2000
PublicationTitle Journal of crystal growth
PublicationYear 2004
References Grioni (10.1016/j.jcrysgro.2004.07.052_bib17) 1984; 53
Goettler (10.1016/j.jcrysgro.2004.07.052_bib18) 1997; 474
Yoshimoto (10.1016/j.jcrysgro.2004.07.052_bib8) 1990; 29
Hillebrecht (10.1016/j.jcrysgro.2004.07.052_bib16) 1989; 277
Inoue (10.1016/j.jcrysgro.2004.07.052_bib15) 2004; 22
Matzke (10.1016/j.jcrysgro.2004.07.052_bib19) 1981
Huang (10.1016/j.jcrysgro.2004.07.052_bib7) 1995; 67
Inoue (10.1016/j.jcrysgro.2004.07.052_bib13) 1997; 474
Inoue (10.1016/j.jcrysgro.2004.07.052_bib1) 1990; 56
Yaegashi (10.1016/j.jcrysgro.2004.07.052_bib6) 1994; 33
Chen (10.1016/j.jcrysgro.2004.07.052_bib22) 2002; 91
Nishikawa (10.1016/j.jcrysgro.2004.07.052_bib9) 2002; 81
Furusawa (10.1016/j.jcrysgro.2004.07.052_bib5) 2001; 78
Inoue (10.1016/j.jcrysgro.2004.07.052_bib2) 1991; 69
Inoue (10.1016/j.jcrysgro.2004.07.052_bib10) 1991; 59
Yoshimoto (10.1016/j.jcrysgro.2004.07.052_bib4) 1995; 34
Ami (10.1016/j.jcrysgro.2004.07.052_bib14) 2001; 78
Inoue (10.1016/j.jcrysgro.2004.07.052_bib12) 1994; 341
Inoue (10.1016/j.jcrysgro.2004.07.052_bib20) 1993; 32
Tye (10.1016/j.jcrysgro.2004.07.052_bib3) 1994; 341
Inoue (10.1016/j.jcrysgro.2004.07.052_bib11) 1993; 131
Schlom (10.1016/j.jcrysgro.2004.07.052_bib21) 2002; 27
References_xml – volume: 81
  start-page: 4386
  year: 2002
  ident: 10.1016/j.jcrysgro.2004.07.052_bib9
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1526169
  contributor:
    fullname: Nishikawa
– volume: 69
  start-page: 8313
  year: 1991
  ident: 10.1016/j.jcrysgro.2004.07.052_bib2
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.347442
  contributor:
    fullname: Inoue
– volume: 53
  start-page: 2331
  year: 1984
  ident: 10.1016/j.jcrysgro.2004.07.052_bib17
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.53.2331
  contributor:
    fullname: Grioni
– volume: 56
  start-page: 1332
  year: 1990
  ident: 10.1016/j.jcrysgro.2004.07.052_bib1
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.103202
  contributor:
    fullname: Inoue
– volume: 277
  start-page: 277
  year: 1989
  ident: 10.1016/j.jcrysgro.2004.07.052_bib16
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.101908
  contributor:
    fullname: Hillebrecht
– start-page: 178
  year: 1981
  ident: 10.1016/j.jcrysgro.2004.07.052_bib19
  contributor:
    fullname: Matzke
– volume: 32
  start-page: 1765
  year: 1993
  ident: 10.1016/j.jcrysgro.2004.07.052_bib20
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.32.1765
  contributor:
    fullname: Inoue
– volume: 27
  start-page: 198
  year: 2002
  ident: 10.1016/j.jcrysgro.2004.07.052_bib21
  publication-title: MRS Bull.
  doi: 10.1557/mrs2002.71
  contributor:
    fullname: Schlom
– volume: 22
  start-page: 46
  year: 2004
  ident: 10.1016/j.jcrysgro.2004.07.052_bib15
  publication-title: J. Vac. Sci. Technol. A
  doi: 10.1116/1.1626644
  contributor:
    fullname: Inoue
– volume: 341
  start-page: 107
  year: 1994
  ident: 10.1016/j.jcrysgro.2004.07.052_bib3
  publication-title: Mater. Res. Soc. Symp. Proc.
  doi: 10.1557/PROC-341-107
  contributor:
    fullname: Tye
– volume: 78
  start-page: 1838
  year: 2001
  ident: 10.1016/j.jcrysgro.2004.07.052_bib5
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1356451
  contributor:
    fullname: Furusawa
– volume: 59
  start-page: 3604
  year: 1991
  ident: 10.1016/j.jcrysgro.2004.07.052_bib10
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.105646
  contributor:
    fullname: Inoue
– volume: 474
  start-page: 333
  year: 1997
  ident: 10.1016/j.jcrysgro.2004.07.052_bib18
  publication-title: Mater. Res. Soc. Symp. Proc.
  doi: 10.1557/PROC-474-333
  contributor:
    fullname: Goettler
– volume: 33
  start-page: 270
  year: 1994
  ident: 10.1016/j.jcrysgro.2004.07.052_bib6
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.33.270
  contributor:
    fullname: Yaegashi
– volume: 29
  start-page: L1199
  year: 1990
  ident: 10.1016/j.jcrysgro.2004.07.052_bib8
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.29.L1199
  contributor:
    fullname: Yoshimoto
– volume: 91
  start-page: 5728
  year: 2002
  ident: 10.1016/j.jcrysgro.2004.07.052_bib22
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1461059
  contributor:
    fullname: Chen
– volume: 34
  start-page: L688
  year: 1995
  ident: 10.1016/j.jcrysgro.2004.07.052_bib4
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.34.L688
  contributor:
    fullname: Yoshimoto
– volume: 131
  start-page: 347
  year: 1993
  ident: 10.1016/j.jcrysgro.2004.07.052_bib11
  publication-title: J. Crystal Growth
  doi: 10.1016/0022-0248(93)90184-X
  contributor:
    fullname: Inoue
– volume: 78
  start-page: 1361
  year: 2001
  ident: 10.1016/j.jcrysgro.2004.07.052_bib14
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1351849
  contributor:
    fullname: Ami
– volume: 474
  start-page: 321
  year: 1997
  ident: 10.1016/j.jcrysgro.2004.07.052_bib13
  publication-title: Mater. Res. Soc. Symp. Proc.
  doi: 10.1557/PROC-474-321
  contributor:
    fullname: Inoue
– volume: 341
  start-page: 101
  year: 1994
  ident: 10.1016/j.jcrysgro.2004.07.052_bib12
  publication-title: Proc. Mater. Res. Soc.
  doi: 10.1557/PROC-341-101
  contributor:
    fullname: Inoue
– volume: 67
  start-page: 3724
  year: 1995
  ident: 10.1016/j.jcrysgro.2004.07.052_bib7
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.115362
  contributor:
    fullname: Huang
SSID ssj0001610
Score 1.7699274
SourceID crossref
SourceType Aggregation Database
StartPage 176
Title Orientation selective epitaxial growth of CeO 2 layers on Si(1 0 0) substrates using reactive DC magnetron sputtering with substrate bias
Volume 271
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELaWcgAOCAqIt3zgAIqyONk8j2gLqpCgh7ZSb5HtON1saVJtEonlwJ3fxR9jxk6cQCtEuUSRd8eKM588nyfzIOSV9PMol57v-jLhbpDzhZvwJHBTAQK5hEORwNzhT5-j_ePg40l4Mpv9nEQtda2Yy29X5pX8j1ZhDPSKWbLX0KydFAbgHvQLV9AwXP9Jxwebsk8dqpxGN7TBOCCFjUC-oif8FM7Y7UpHXKgDx3e-cCTY-H3gsMQCTQ5zGLoFGtg9dJXaxum07wCYpJlrb-mc89NKocPcaS50V2vrvrVijij7IKPLNFdutk1rn8Uisao7U--3Pq-33HRf0c7eFXZ3MllEDd92Z6X1AfEzDriqjU3AZOrV-NuqzDULhht4W3D-_82bEdi4uGl2AdZZm-7QfuxNodjnS5od14ujifH2TFecS3bBuCjW8zUuGhasHQOmaqs_WsLh6_8fBtKGLQ4RcetsmAe7eAYZizOY5wa56cdpiHGl8-9jnBFQajaUrMeFTdLUr36eCUOaUJ2je-Rurzz6zgDuPpmpapfcWg6tAXfJnUkVywfkxwSG1MKQWhhSo3paFxRgSH1qYEjh34fla48yyt7QEYJUQ5AOEKR7S2ohSEcIUoTgKEYRgg_J8Yf3R8t9t-_w4Uos_esCHVbAMFXhRdgWoJBhwVIVSxYVSQrkHEZEkIoiUDJQ3IvzJAlCxWIhsZSnYItHZKeqK_WY0AVsLrG3SBIVgkishJAsydNQpGCS_CJ8Qt4ObzW7MIVcsr_r8-m1JZ6R2yOmn5OddtOpF8BZW_FSY-IXoH-ejA
link.rule.ids 315,786,790,27955,27956
linkProvider Elsevier
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Orientation+selective+epitaxial+growth+of+CeO+2+layers+on+Si%281+0+0%29+substrates+using+reactive+DC+magnetron+sputtering+with+substrate+bias&rft.jtitle=Journal+of+crystal+growth&rft.au=Inoue%2C+Tomoyasu&rft.au=Ohashi%2C+Masayuki&rft.au=Sakamoto%2C+Naomichi&rft.au=Shida%2C+Shigenari&rft.date=2004-10-01&rft.issn=0022-0248&rft.volume=271&rft.issue=1-2&rft.spage=176&rft.epage=183&rft_id=info:doi/10.1016%2Fj.jcrysgro.2004.07.052&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_jcrysgro_2004_07_052
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0022-0248&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0022-0248&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0022-0248&client=summon