High performance MoS 2 -based field-effect transistor enabled by hydrazine doping

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Bibliographic Details
Published inNanotechnology Vol. 27; no. 22; p. 225201
Main Authors Lim, Dongsuk, Kannan, E S, Lee, Inyeal, Rathi, Servin, Li, Lijun, Lee, Yoontae, Khan, Muhammad Atif, Kang, Moonshik, Park, Jinwoo, Kim, Gil-Ho
Format Journal Article
LanguageEnglish
Published 03.06.2016
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/27/22/225201