Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

• Published in: Nanoscale research letters Vol. 9; no. 1; p. 52
• Main Authors: Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Simon M
• Format: Journal Article
• Language: English
• Published: New York Springer New York 29.01.2014; Springer Nature B.V; BioMed Central Ltd; Springer
• Subjects: Chemistry and Materials Science; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Hydrogen redox; Conjugation double bond; RRAM; Carbon
• ISSN: 1931-7573; 1556-276X; 1556-276X
• DOI: 10.1186/1556-276X-9-52

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp 2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp 3 -type carbon filament through hydrogenation process.