Spin effects in InAs self-assembled quantum dots

We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on app...

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Bibliographic Details
Published inNanoscale research letters Vol. 6; no. 1; p. 115
Main Authors dos Santos, Ednilson C, Gobato, Yara Galvão, Brasil, Maria JSP, Taylor, David A, Henini, Mohamed
Format Journal Article
LanguageEnglish
Published New York Springer New York 03.02.2011
Springer Nature B.V
BioMed Central Ltd
Springer
SpringerOpen
Subjects
Chemistry and Materials Science
International Conference on Superlattices
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanostructures and Nanodevices (ICSNN 2010)
Nanotechnology
Nanotechnology and Microengineering
Applied Bias Voltage
Resonant Tunneling
Polarization Degree
GaAs
Quantum Well
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Summary:We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.
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ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-6-115