Spin effects in InAs self-assembled quantum dots
We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on app...
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Published in | Nanoscale research letters Vol. 6; no. 1; p. 115 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer New York
03.02.2011
Springer Nature B.V BioMed Central Ltd Springer SpringerOpen |
Subjects | |
Online Access | Get full text |
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Summary: | We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1556-276X 1931-7573 1556-276X |
DOI: | 10.1186/1556-276X-6-115 |