Graphene nanoribbon field-effect transistor at high bias

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation,...

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Published inNanoscale research letters Vol. 9; no. 1; p. 604
Main Authors Ghadiry, Mahdiar, Ismail, Razali, Saeidmanesh, Mehdi, Khaledian, Mohsen, Manaf, Asrulnizam Abd
Format Journal Article
LanguageEnglish
Published New York Springer New York 06.11.2014
Springer Nature B.V
BioMed Central Ltd
Springer
Subjects
Bias
Chemistry and Materials Science
Electric potential
Electrical faults
Field effect transistors
Graphene
Ionization
Ionization coefficients
Materials Science
Molecular Medicine
Monte Carlo simulation
Nano Express
Nanochemistry
Nanoribbons
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Semiconductor devices
Voltage
Fabrication
Breakdown
Model
High bias
Graphene
Current
Online AccessGet full text
ISSN1556-276X
1931-7573
1556-276X
DOI10.1186/1556-276X-9-604

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Abstract Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.
AbstractList Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.
ArticleNumber 604
Author Manaf, Asrulnizam Abd
Ghadiry, Mahdiar
Ismail, Razali
Saeidmanesh, Mehdi
Khaledian, Mohsen
AuthorAffiliation 1 Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor Darul Takzim 81310, Malaysia
2 School of Electrical and Electronic Engineering, Univesiti Sains Malaysia, Pulau Pinang 14300, Malaysia
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BackLink https://www.ncbi.nlm.nih.gov/pubmed/25404874$$D View this record in MEDLINE/PubMed
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ContentType Journal Article
Copyright Ghadiry et al.; licensee Springer. 2014. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
Copyright Springer Nature B.V. Dec 2014
Copyright © 2014 Ghadiry et al.; licensee Springer. 2014 Ghadiry et al.; licensee Springer.
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– notice: Copyright Springer Nature B.V. Dec 2014
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Issue 1
Keywords Fabrication
Breakdown
Model
High bias
Graphene
Current
Language English
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Snippet Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of...
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SubjectTerms Bias
Chemistry and Materials Science
Electric potential
Electrical faults
Field effect transistors
Graphene
Ionization
Ionization coefficients
Materials Science
Molecular Medicine
Monte Carlo simulation
Nano Express
Nanochemistry
Nanoribbons
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Semiconductor devices
Voltage
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Title Graphene nanoribbon field-effect transistor at high bias
URI https://link.springer.com/article/10.1186/1556-276X-9-604
https://www.ncbi.nlm.nih.gov/pubmed/25404874
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Volume 9
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