Graphene nanoribbon field-effect transistor at high bias

• Published in: Nanoscale research letters Vol. 9; no. 1; p. 604
• Main Authors: Ghadiry, Mahdiar, Ismail, Razali, Saeidmanesh, Mehdi, Khaledian, Mohsen, Manaf, Asrulnizam Abd
• Format: Journal Article
• Language: English
• Published: New York Springer New York 06.11.2014; Springer Nature B.V; BioMed Central Ltd; Springer
• Subjects: Bias; Chemistry and Materials Science; Electric potential; Electrical faults; Field effect transistors; Graphene; Ionization; Ionization coefficients; Materials Science; Molecular Medicine; Monte Carlo simulation; Nano Express; Nanochemistry; Nanoribbons; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Semiconductor devices; Voltage; Fabrication; Breakdown; Model; High bias; Graphene; Current
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/1556-276X-9-604

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.