Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping

• Published in: Nanoscale research letters Vol. 7; no. 1; p. 99
• Main Authors: Dalapati, Goutam Kumar, Shun Wong, Terence Kin, Li, Yang, Chia, Ching Kean, Das, Anindita, Mahata, Chandreswar, Gao, Han, Chattopadhyay, Sanatan, Kumar, Manippady Krishna, Seng, Hwee Leng, Maiti, Chinmay Kumar, Chi, Dong Zhi
• Format: Journal Article
• Language: English
• Published: New York Springer New York 02.02.2012; BioMed Central Ltd; Springer
• Subjects: Chemistry and Materials Science; INEC 2011; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; dielectrics; ALD; high; epitaxial-GaAs; Ge out-diffusion and auto-doping
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/1556-276X-7-99

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high- k dielectrics (TiO 2 /Al 2 O 3 ) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 10 17 cm -3 . This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 10 18 cm -3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). PACS: 81.15.Gh.