Switching response modeling of the CMOS inverter for sub-micron devices

• Published in: Design, Automation, and Test in Europe: Proceedings of the conference on Design, automation and test in Europe; 23-26 Feb. 1998 pp. 729 - 737
• Main Authors: Bisdounis, L., Nikolaidis, S., Koufopavlou, O., Goutis, C. E.
• Format: Conference Proceeding
• Language: English
• Published: Washington, DC, USA IEEE Computer Society 23.02.1998
• Series: ACM Conferences
• Subjects: Hardware > Electronic design automation > Physical design (EDA); Hardware > Integrated circuits > Semiconductor memory; Hardware > Robustness; Sub-micron devices; CMOS circuits timing analysis; Propagation delay modeling
• ISBN: 9780818683596; 0818683597
• DOI: 10.5555/368058.368382

In this paper an accurate, analytical model for the evaluation of the CMOS inverter delay in the sub- micron regime, is presented. A detailed analysis of the inverter operation is provided which results to accurate expressions describing the output waveform. These analytical expressions are valid for all the inverter operation regions and input waveform slopes. They take into account the influences of the short- circuit current during switching, and the gate-to- drain coupling capacitance. The presented model shows clearly the influence of the inverter design characteristics, the load capacitance, and the slope of the input waveform driving the inverter on the propagation delay. The results are in excellent agreement with SPICE simulations.