On the Nature of Interlayer Bonds in Two-dimensional Materials
The role of interlayer bonds in the two-dimensional (2D) materials "beyond graphene" and so-called van der Waals heterostructures is vital, and understanding the nature of these bonds in terms of strength and type is essential due to a wide range of their prospective technological applicat...
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Published in | arXiv.org |
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Main Authors | , , , |
Format | Paper Journal Article |
Language | English |
Published |
Ithaca
Cornell University Library, arXiv.org
07.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The role of interlayer bonds in the two-dimensional (2D) materials "beyond graphene" and so-called van der Waals heterostructures is vital, and understanding the nature of these bonds in terms of strength and type is essential due to a wide range of their prospective technological applications. However, this issue has not yet been properly addressed in the previous investigations devoted to 2D materials. In our work, by using first-principles calculations we perform a systematic study of the interlayer bonds and charge redistribution of several representative 2D materials that are traditionally referred as van der Waals systems. Our results demonstrate that one can distinguish three main types of inter-layer couplings in the considered 2D structures: one atom thick membranes bonded by London dispersion forces (graphene, hBN), systems with leading electrostatic interaction between layers (diselenides, InSe and bilayer silica) and materials with so-called dative or coordination chemical bonds between layers (ditelurides). We also propose a protocol for recognising the leading type of interlayer bonds in a system that includes comparison of interlayer distances, binding energies and redistribution of the charge densities in interlayer space. Such an approach is computationally cheap and can be used to further prediction of chemical and physical properties such as charge density waves (CDW), work function and chemical stability at ambient conditions. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.2304.03558 |