Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

• Published in: arXiv.org
• Main Authors: Biswas, Abhijit, Alvarez, Gustavo A, Li, Tao, Christiansen-Salameh, Joyce, Jeong, Eugene, Puthirath, Anand B, Sathvik, Ajay Iyengar, Li, Chenxi, Gray, Tia, Zhang, Xiang, Pieshkov, Tymofii S, Kannan, Harikishan, Elkins, Jacob, Vajtai, Robert, Birdwell, A Glen, Neupane, Mahesh R, Garratt, Elias J, Pate, Bradford B, Ivanov, Tony G, Zhao, Yuji, Tian, Zhiting, Ajayan, Pulickel M
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 20.09.2023
• Subjects: Boron nitride; Diamagnetism; Diamonds; Energy gap; Heat transfer; Heterostructures; Magnetic properties; Optical properties; Physics - Applied Physics; Physics - Materials Science; Pulsed laser deposition; Pulsed lasers; Refractivity; Room temperature; Single crystals; Thermal conductivity; Thin films
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2305.13306

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures.