Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilay...

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Published inarXiv.org
Main Authors Giddings, A D, Makarovsky, O N, Khalid, M N, Yasin, S, Edmonds, K W, Campion, R P, Wunderlich, J, Jungwirth, T, Williams, D A, Gallagher, B L, Foxon, C T
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 01.07.2008
Subjects
Anisotropy
Dependence
Electron beam lithography
Ferromagnetism
Magnetoresistance
Magnetoresistivity
Nanotechnology devices
Physics - Materials Science
Physics - Strongly Correlated Electrons
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Summary:We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism.
ISSN:2331-8422
DOI:10.48550/arxiv.0803.3416