Robust Ultraviolet to Near-infrared Quantum Emitters in Hexagonal Boron Nitride up to 1100 K
A stable single-photon source working at high temperatures with high brightness and covering full band emission from one host material is critically important for quantum technologies. Here, we find that the certain hBN single-photon emissions (SPEs) can be significantly enhanced by lasers with spec...
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Main Authors | , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
18.08.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A stable single-photon source working at high temperatures with high
brightness and covering full band emission from one host material is critically
important for quantum technologies. Here, we find that the certain hBN
single-photon emissions (SPEs) can be significantly enhanced by lasers with
special wavelengths, which largely broaden the wavelength range of the hBN
emitters, down to ultraviolet (357 nm) and up to near-infrared (912 nm).
Importantly, these hBN SPEs are still stable even at the temperature up to 1100
Kelvin. The decoupling between single-photon and acoustic phonon is observed at
high temperatures. Our work suggests that hBN can be a good host material for
generating single-photon sources with ultrabroad wavelength range. |
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DOI: | 10.48550/arxiv.1908.06578 |