Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs,...
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Main Authors | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
22.12.2017
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Subjects | |
Online Access | Get full text |
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Summary: | In the context of the studies of the ATLAS High Luminosity LHC programme,
radiation tolerant pixel detectors in CMOS technologies are investigated. To
evaluate the effects of substrate resistivity on CMOS sensor performance, the
H35DEMO demonstrator, containing different diode and amplifier designs, was
produced in ams H35 HV-CMOS technology using four different substrate
resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~\Omega \cdot cm}$. A
glueing process using a high-precision flip-chip machine was developed in order
to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of
epoxy glue with good uniformity over a large surface. The resulting assemblies
were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV
protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and
tracking properties measured for the different sensor types are shown to be
compatible with the ATLAS ITk requirements for its pixel sensors. |
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DOI: | 10.48550/arxiv.1712.08338 |