T centres in photonic silicon-on-insulator material

• Main Authors: MacQuarrie, E. R, Chartrand, C, Higginbottom, D. B, Morse, K. J, Karasyuk, V. A, Roorda, S, Simmons, S
• Format: Journal Article
• Language: English
• Published: 05.03.2021
• Subjects: Physics - Optics; Physics - Quantum Physics
• DOI: 10.48550/arxiv.2103.03998

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $\lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.