Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a SOI layer partially amorphized by arsenic ion impl...

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Main Authors Tabata, Toshiyuki, Rozé, Fabien, Alba, Pablo Acosta, Halty, Sébastien, Raynal, Pierre-Edouard, Karmous, Imen, Kerdilès, Sébastien, Mazzamuto, Fulvio
Format Journal Article
LanguageEnglish
Published 15.11.2021
Subjects
Physics - Applied Physics
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Summary:UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a SOI layer partially amorphized by arsenic ion implantation and to activate the dopants. In a microsecond scale (~10^-6 s to ~10^-5 s) UV-LA process, monocrystalline solid phase recrystallization and dopant activation without junction deepening is evidenced, thus opening various applications in low thermal budget integration flows.
DOI:10.48550/arxiv.2111.07577