Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature
Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here...
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Main Authors | , , , , , |
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Format | Journal Article |
Language | English |
Published |
02.09.2021
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Subjects | |
Online Access | Get full text |
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