Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here...

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Bibliographic Details
Main Authors Hafermann, Martin, Schock, Robin, Wan, Chenghao, Rensberg, Jura, Kats, Mikhail A, Ronning, Carsten
Format Journal Article
LanguageEnglish
Published 02.09.2021
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