All-optical modulation with single-photons using electron avalanche

• Main Authors: Sychev, Demid V, Chen, Peigang, Yang, Morris, Fruhling, Colton, Lagutchev, Alexei, Kildishev, Alexander V, Boltasseva, Alexandra, Shalaev, Vladimir M
• Format: Journal Article
• Language: English
• Published: 18.12.2023
• Subjects: Physics - Applied Physics; Physics - Optics; Physics - Quantum Physics
• DOI: 10.48550/arxiv.2312.11686

The distinctive characteristics of light such as high-speed propagation, low-loss, low cross-talk and power consumption as well as quantum properties, make it uniquely suitable for various critical applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor though is the weak optical nonlinearity of conventional media that poses challenges for the control and manipulation of light, especially with ultra-low, few-photon-level intensities. Notably, creating a photonic transistor working at single-photon intensities remains an outstanding challenge. In this work, we demonstrate all-optical modulation using a beam with single-photon intensity. Such low-energy control is enabled by the electron avalanche process in a semiconductor triggered by the impact ionization of charge carriers. This corresponds to achieving a nonlinear refractive index of n2~7*10^-3m^2/W, which is two orders of magnitude higher than in the best nonlinear optical media (Table S1). Our approach opens up the possibility of terahertz-speed optical switching at the single-photon level, which could enable novel photonic devices and future quantum photonic information processing and computing, fast logic gates, and beyond. Importantly, this approach could lead to industry-ready CMOS-compatible and chip-integrated optical modulation platforms operating with single photons.