P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3
1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia Univ...
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Main Authors | , , , , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
22.06.2022
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Subjects | |
Online Access | Get full text |
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Summary: | 1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800,
Australia 2 Australian Research Council Centre of Excellence in Future
Low-Energy Electronics Technologies (FLEET), Monash University, Clayton,
Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia
University, New York, New York 10027, United States 4 Department of Applied
Physics and Applied Mathematics, Columbia University, New York, New York 10027,
United States 5 School of Physics, the University of Melbourne, Melbourne, VIC
3010, Australia 6 Research Center for Functional Materials, National Institute
for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International
Center for Materials Nanoarchitectonics, National Institute for Materials
Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of
New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences
and Center of Atomic Initiative for New Material, National Taiwan University,
Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash
University, Clayton, 3800, VIC, Australia |
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DOI: | 10.48550/arxiv.2206.11096 |