Direct synthesis of single-crystal bilayer graphene on various dielectric substrates
In this work, a novel method to grow high-quality and large bilayer graphene (BLG) directly on various dielectric substrates was demonstrated. Large area single-crystal monolayer graphene was applied as a seeding layer to facilitate the homo-epitaxial synthesis of single crystal BLG directly on insu...
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Main Authors | , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
01.04.2022
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Subjects | |
Online Access | Get full text |
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Summary: | In this work, a novel method to grow high-quality and large bilayer graphene
(BLG) directly on various dielectric substrates was demonstrated. Large area
single-crystal monolayer graphene was applied as a seeding layer to facilitate
the homo-epitaxial synthesis of single crystal BLG directly on insulating
substrates. The Cu nano-powders (Cu NP) with nanostructure and high
surface-area were used as the remote catalysis to provide long-lasting
catalytic activity during the graphene growth. The TEM results confirmed the
single-crystalline nature of the BLG domains, which validates the superiority
of the homo-epitaxial growth technique. The as-grown BLG show comparable
quality with the CVD-grown BLG on metal surface. Field-effect transistors
directly fabricated on the as-grown BLG/SiO$ _2 $/Si showed a room temperature
carrier mobility as high as 2297 cm $ ^2 $ V$ ^{-1}$ s $^{-1} $. |
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DOI: | 10.48550/arxiv.2204.00194 |