Simulation of X-ray diffraction in Mn$_x$Bi$_2$Te$_{3+x}$ epitaxic films
Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis metho...
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Main Authors | , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
04.09.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Disordered heterostructures stand as a general description for compounds that
are part of homologous series such as bismuth chalcogenides. In device
engineering, van der Waals epitaxy of these compounds is very promising for
applications in spintronic and quantum computing. Structural analysis methods
are essential to control and improve their synthesis in the form of thin films.
Recently, X-rays tools have been proposed for structural modeling of disordered
heterostructures [arXiv:2107.12280]. Here, we further evaluate the use of these
tools to study the compound Mn$_x$Bi$_2$Te$_{3+x}$ in the grazing incidence
region of the reflectivity curves, as well as the effect of thickness
fluctuation in the wide angle region. |
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DOI: | 10.48550/arxiv.2109.01914 |