Framework for engineering of spin defects in hexagonal boron nitride by focused ion beams
Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy (VB-) defect, which is typically fabricated by ion irradiat...
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Main Authors | , , , , , , |
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Format | Journal Article |
Language | English |
Published |
12.03.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der
Waals host of optically active spin defects for quantum technologies. Most
studies of the spin-photon interface in hBN focus on the negatively charged
boron vacancy (VB-) defect, which is typically fabricated by ion irradiation.
However, VB- fabrication methods often lack robustness and reproducibility when
applied to thin flakes (less than 10 nm) of hBN. Here we identify mechanisms
that both promote and inhibit VB- generation and optimize ion beam parameters
for site-specific fabrication of optically active VB- centers. We emphasize
conditions accessible by high resolution focused ion beam (FIB) systems, and
present a framework for VB- fabrication in hBN flakes of arbitrary thickness
for applications in quantum sensing and quantum information processing. |
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DOI: | 10.48550/arxiv.2303.06784 |