Imaging Light-Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping
In recent years, halide perovskite materials have been used to make high performance solar cell and light-emitting devices. However, material defects still limit device performance and stability. Here, we use synchrotron-based Bragg Coherent Diffraction Imaging to visualise nanoscale strain fields,...
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Main Authors | , , , , , , , , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
19.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | In recent years, halide perovskite materials have been used to make high
performance solar cell and light-emitting devices. However, material defects
still limit device performance and stability. Here, we use synchrotron-based
Bragg Coherent Diffraction Imaging to visualise nanoscale strain fields, such
as those local to defects, in halide perovskite microcrystals. We find
significant strain heterogeneity within MAPbBr$_{3}$ (MA =
CH$_{3}$NH$_{3}^{+}$) crystals in spite of their high optoelectronic quality,
and identify both $\langle$100$\rangle$ and $\langle$110$\rangle$ edge
dislocations through analysis of their local strain fields. By imaging these
defects and strain fields in situ under continuous illumination, we uncover
dramatic light-induced dislocation migration across hundreds of nanometres.
Further, by selectively studying crystals that are damaged by the X-ray beam,
we correlate large dislocation densities and increased nanoscale strains with
material degradation and substantially altered optoelectronic properties
assessed using photoluminescence microscopy measurements. Our results
demonstrate the dynamic nature of extended defects and strain in halide
perovskites and their direct impact on device performance and operational
stability. |
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DOI: | 10.48550/arxiv.2304.09554 |