Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties

• Main Authors: Wright, John G, Xing, Huili G, Jena, Debdeep
• Format: Journal Article
• Language: English
• Published: 26.03.2022
• Subjects: Physics - Materials Science; Physics - Superconductivity
• DOI: 10.48550/arxiv.2203.14083

NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline $\beta$-$\textrm{Nb}_2\textrm{N}$ films can be grown at substrate temperatures of 1100 \degree C or higher, and that the superconducting critical temperature of phase pure $\beta$-$\textrm{Nb}_2\textrm{N}$ films is $0.35~K<T_c<0.6~K$, based on measurements of films grown at different substrate temperatures.