Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes

Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a...

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Bibliographic Details
Main Authors Riazimehr, Sarah, Belete, Melkamu, Kataria, Satender, Engström, Olof, Lemme, Max Christian
Format Journal Article
LanguageEnglish
Published 25.02.2020
Subjects
Physics - Applied Physics
Physics - Mesoscale and Nanoscale Physics
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Summary:Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also demonstrate the accurate extraction of the built-in potential ($\Phi$$_{bi}$) and the Schottky barrier height from the measurement data independent of the Richardson constant.
DOI:10.48550/arxiv.2002.10763