Design a TDC in SiGe for RPC's electronics Front-end for the use in a high-rate experiment
With the new generation of the RPC, it is possible to work with induced signals of hundreds $\mu V$, hence the front-end electronics is an important and delicate part of the detector in order to get a detectable signal. The electronic chain is made up of an amplifier, a discriminator, a TDC. The new...
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Main Authors | , , , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
11.06.2018
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Subjects | |
Online Access | Get full text |
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Summary: | With the new generation of the RPC, it is possible to work with induced
signals of hundreds $\mu V$, hence the front-end electronics is an important
and delicate part of the detector in order to get a detectable signal. The
electronic chain is made up of an amplifier, a discriminator, a TDC. The new
front-end is realized with the use of silicon-germanium (SiGe) components,
provided by IHP microelectronics. With this technology we can implement BJT and
CMOS transistors on the same chip. The benefit of this improvement is to
minimize: power consumption of the channels ($2 \div 3$ $ \frac{mW}{ch}$),
noise (500 $e^-$ r.m.s), radiation hardness (10 kGy,$10^3$ $\frac{n}{cm}$) and
it maximizes the speed of response electronics. In this work I will highlight
the first TDC prototypes' results. The TDC uses a local oscillator, that has an
oscillation range between $0.6 \div 3 $ GHz, and a the temporal jitter of 15
ps. The data output from the TDC are presented in binary in order to lighten
data processing to the acquisition system. Moreover, we are studying a way to
minimize system latency. This optimization involves the addition of a
serializer (PISO) that sends the TDC data output to the acquisition system at 2
GHz. |
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DOI: | 10.48550/arxiv.1806.04082 |